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| HF75-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF75-50F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45 A FEATURES: * PG = 14 dB min. at 75 W/30 MHz * IMD3 = 50 dBc max. at 75 W(PEP) * OmnigoldTM Metalization System F E B C D E C E O.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG JC O G HI 3.25 A 110 V 55 V 4.0 V 127 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 2.0 OC/W O O DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10610 CHARACTERISTICS SYMBOL BV CES BV CE0 BV EBO IC = 100 mA IC = 200 mA IE = 10 mA TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 110 55 4.0 UNITS V V V hFE Cob GP IMD3 C VCE = 6.0 V VCB = 50 V IC = 1.4 A f = 1.0 MHz 19 --- 50 100 --pF dB dBc % VCE = 50 V POUT = 75 W(PEP) 14 --37 --- -30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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